NTE 192 Transistor Datasheet - Max Ratings & Electrical Characteristics

This document is a datasheet excerpt for the NTE 192 NPN transistor, showing its Absolute Maximum Ratings and Electrical Characteristics. Maximum ratings include collector–emitter voltage of 50V, collector–base voltage of 50V, emitter–base voltage of 5V, continuous collector current of 500mA, total power dissipation of 900mW (at TC = +25°C, derating 7.2mW/°C) or 560mW (at TA = +25°C, derating 4.47mW/°C), operating junction temperature of +150°C, storage temperature range of –55° to +150°C, and maximum lead temperature during soldering of +260°C. The electrical characteristics table lists DC characteristics: collector cutoff current (ICBO) max 0.1µA at VCB = 50V (15µA at +100°C), emitter cutoff current (IEBO) max 0.1µA at VEB = 5V, collector saturation voltage max 0.30V and base saturation voltage max 0.85V (both at IB = 3mA, IC = 50mA), and DC current gain (hFE) of 180 to 540 at VCE = 4.5V, IC = 2mA. Annotations in orange highlight the 5V emitter–base voltage rating, asking "Is this my problem" and "Does this need to support 12v," indicating the uploader was troubleshooting a circuit (apparently a Subaru tachometer/COP conversion project based on album context).