NTE 192 Transistor Datasheet - Max Ratings & Electrical Characteristics

This document is a datasheet excerpt for the NTE 192 NPN transistor, showing its Absolute Maximum Ratings and Electrical Characteristics. Maximum ratings include collector-emitter voltage of 50V, collector-base voltage of 50V, emitter-base voltage of 5V, continuous collector current of 500mA, total power dissipation of 900mW (at TC = +25°C, derating 7.2mW/°C) or 560mW (at TA = +25°C, derating 4.47mW/°C), operating junction temperature of +150°C, storage temperature range of -55° to +150°C, and maximum lead temperature during soldering of +260°C. The electrical characteristics table lists DC characteristics: collector cutoff current (ICBO) max 0.1µA at VCB = 50V (15µA at +100°C), emitter cutoff current (IEBO) max 0.1µA at VEB = 5V, collector saturation voltage max 0.30V and base saturation voltage max 0.85V (both at IB = 3mA, IC = 50mA), and DC current gain (hFE) of 180 to 540 at VCE = 4.5V, IC = 2mA. Annotations in orange highlight the 5V emitter-base voltage rating, asking "Is this my problem" and "Does this need to support 12v," indicating the uploader was troubleshooting a circuit (apparently a Subaru tachometer/COP conversion project based on album context).